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Transistors IXBX50N360HV Single IGBTs Transistors TO-247-3 Integrated Circuit Chip
Product Description Of IXBX50N360HV
IXBX50N360HV is High Voltage, High Frequency BiMOSFET™ Monolithic Bipolar MOS Transistor.
Specification Of IXBX50N360HV
Part Number | IXBX50N360HV |
Voltage - Collector Emitter Breakdown (Max)
|
3600 V
|
Current - Collector (Ic) (Max)
|
125 A
|
Current - Collector Pulsed (Icm)
|
420 A
|
Vce(on) (Max) @ Vge, Ic
|
2.9V @ 15V, 50A
|
Power - Max
|
660 W
|
Input Type
|
Standard
|
Gate Charge
|
210 nC
|
Td (on/off) @ 25°C
|
46ns/205ns
|
Test Condition
|
960V, 50A, 5Ohm, 15V
|
Applications Of IXBX50N360HV
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.