ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247
Product Description Of SCTWA50N120
SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package.
Specification Of SCTWA50N120
| Part Number: | SCTWA50N120 | FET Type: | N-Channel |
|---|---|---|---|
| Technology: | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) | Drive Voltage (Max Rds On, Min Rds On): | 20V |
Features Of SCTWA50N120
Applications Of SCTWA50N120
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| A4980KLPTR | HTSSOP-28 |
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| EN2340QI | QFN68 |
| EN5337QI | QFN38 |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.